Engineering quantum phenomena of two-dimen-sional nearly free electron states has been at the forefront of nanoscience studies ever since the first creation of a quantum corral. Common strategies to fabricate confining nanoarchitec-tures rely on manipulation or on applying supramolecular chemistry principles. The resulting nanostructures do not protect the engineered electronic states against external influences, hampering the potential for future applications. These restrictions could be overcome by passivating the nanostructures with a chemically inert layer. To this end we report a scalable segregation-based growth approach forming extended quasi-hexagonal nanoporous CuS networks on Cu(111) whose assembly is driven by an autoprotecting h-BN overlayer. We further demonstrate that by this architecture both the Cu(111) surface state and image potential states of the h-BN/CuS heterostructure are confined within the nanopores, effectively forming an extended array of quantum dots. Semiempirical electron-plane-wave-expansion simulations shed light on the scattering potential landscape responsible for the modulation of the electronic properties. The protective properties of the h-BN capping are tested under various conditions, representing an important step toward the realization of robust surface state based electronic devices.

Surfaces are at the frontier of every known solid. They provide versatile supports for functional nanostructures and mediate essential physicochemical processes. Intimately related to two-dimensional materials, interfaces and atomically thin films often feature distinct electronic states with respect to the bulk, which is key to many relevant properties, such as catalytic activity, interfacial charge-transfer, and crystal growth mechanisms. To induce novel quantum properties via lateral scattering and confinement, reducing the surface electrons' dimensionality and spread with atomic precision is of particular interest. Both atomic manipulation and supramolecular principles provide access to custom-designed molecular assemblies and superlattices, which tailor the surface electronic landscape and influence fundamental chemical and physical properties at the nanoscale. Here the confinement of surface-state electrons is reviewed, with a focus on their interaction with molecular scaffolds created by molecular manipulation and self-assembly protocols under ultrahigh vacuum conditions. Starting with the quasifree two-dimensional electron gas present at the o111 thorn -oriented surface planes of noble metals, the intriguing molecule-based structural complexity and versatility is illustrated. Surveyed are low-dimensional confining structures in the form of artificial lattices, molecular nanogratings, or quantum dot arrays, which are constructed upon an appropriate choice of their building constituents. Whenever the realized (metal-)organic networks exhibit long-range order, modified surface band structures with characteristic features emerge, inducing noteworthy physical phenomena such as discretization, quantum coupling or energy, and effective mass renormalization. Such collective electronic states can be additionally modified by positioning guest species at the voids of open nanoarchitectures. The designed scattering potential landscapes can be described with semiempirical models, bringing thus the prospect of total control over surface electron confinement and novel quantum states within reach.

To date, the scalable synthesis of elemental two-dimensional materials beyond graphene still remains elusive. Here, we introduce a versatile chemical vapor deposition (CVD) method to grow borophenes, as well as borophene heterostructures, by selectively using diborane originating from traceable byproducts of borazine. Specifically, metallic borophene polymorphs were successfully synthesized on Ir(111) and Cu(111) single-crystal substrates and conjointly with insulating hexagonal boron nitride (hBN) to form atomically precise lateral borophene-hBN interfaces or vertical van der Waals heterostructures. Thereby, borophene is protected from immediate oxidation by a single hBN overlayer. The ability to synthesize high-quality borophenes with large single-crystalline domains in the micrometer scale by a straight-forward CVD approach opens up opportunities for the study of their fundamental properties and for device incorporation.